型号:

IRF620

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 200V 6A TO-220
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRF620 PDF
标准包装 1,000
系列 PowerMESH™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 6A
开态Rds(最大)@ Id, Vgs @ 25° C 800 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 27nC @ 10V
输入电容 (Ciss) @ Vds 350pF @ 25V
功率 - 最大 70W
安装类型 通孔
封装/外壳 TO-220-3
供应商设备封装 TO-220AB
包装 管件
其它名称 497-3135
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